Transistor structure

ABSTRACT

A transistor structure is provided in the present invention. The transistor structure includes: a substrate comprising a N-type well, a gate disposed on the N-type well, a spacer disposed on the gate, a first lightly doped region in the substrate below the spacer, a P-type source/drain region disposed in the substrate at two sides of the gate, a silicon cap layer covering the P-type source/drain region and the first lightly doped region and a silicide layer disposed on the silicon cap layer, and covering only a portion of the silicon cap layer.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation application of co-pending U.S. patentapplication Ser. No. 13/450,444. The U.S. patent application Ser. No.13/450,444 is a continuation application of U.S. patent application Ser.No. 12/502,239 (now U.S. Pat. No. 8,183,640). The whole contents ofthese related applications are incorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a method of manufacturing asemiconductor device, and a semiconductor structure thereof forimproving short channel effect and drain induced barrier lowering, andmore particularly, to a method of manufacturing MOS transistors, and aMOS structure thereof that improves short channel effect and draininduced barrier lowering.

2. Description of the Prior Art

For decades, chip manufacturers have made metal-oxide-semiconductor(MOS) transistors faster by making them smaller. As the semiconductorprocesses advance to the very deep sub micron era such as 65-nm node orbeyond, how to increase the driving current for MOS transistors hasbecome a critical issue.

To attain higher performance of a semiconductor device, attempts havebeen made to use a strained silicon (Si) layer for increasing themobility of electrons or holes. For example, taking advantage of thelattice constant of SiGe layer being different from that of Si, a strainoccurs in the silicon layer growing on the SiGe layer. Since SiGe has alarger lattice constant than Si, the band structure of Si is altered,thereby increasing the mobility of the carriers.

Other attempts have been made to use germanium embedded in apredetermined source/drain region formed by selective epitaxial growthas a compressive strained silicon film to enhance electron mobility in aPMOS transistor, after a gate is formed. An SiGe layer deposited intothe predetermined source/drain region often increases the mobility ofelectron holes of PMOS, but will simultaneously decrease the electronmobility of an NMOS and reduce the efficiency of the transistor.Therefore, during SiGe layer formation, NMOS is usually covered by asilicon nitride layer serving as a mask. After the SiGe layer is formed,the silicon nitride layer will be removed by hot phosphoric acid.However, the surface of the substrate where the predeterminedsource/drain region of NMOS is disposed will be corroded by hotphosphoric acid. The interface between the gate dielectric layer and thesubstrate is taken as a reference. The baseline of corroded substratebecomes lower than the aforesaid interface. Therefore, after theimplantation process to form a source/drain region, the p/n junctionwill become deeper than a predetermined depth. As a result, shortchannel effect and drain induced barrier lowering (DIBL) effect willoccur.

Therefore, there is still a need for a MOS transistor device and amethod of manufacturing the same to improve problems mentioned above.

SUMMARY OF THE INVENTION

It is therefore an objective of the present invention to provide amethod of fabricating MOS transistors to solve the lowering of thebaseline where the predetermined source/drain region of NMOS is disposedafter removing a mask.

According to a preferred embodiment of the present invention, a methodof fabricating method of fabricating transistors comprises the followingsteps. First, a substrate comprising a first type well and a second typewell is provided. Then, a first gate on the first type well and a secondgate on the second type well are formed respectively. After that, athird spacer is formed on the first gate. Later, an epitaxial layer isformed in the substrate at two sides of the first gate. Next, a fourthspacer is formed on the second gate. Subsequently, a silicon cap layeris formed to cover the epitaxial layer, and the surface of the substrateat two sides of the second gate. Then, a first source/drain region isformed in the substrate at two sides of the first gate. Finally, asecond source/drain region is formed in the substrate at two sides ofthe second gate.

According to another preferred embodiment of the present invention, atransistor structure A semiconductor structure, comprising: a substratecomprising a N-type well, a first gate disposed on the N-type well, afirst spacer disposed on the gate, a first lightly doped region in thesubstrate below the spacer, an P-type source/drain region disposed inthe substrate at two sides of the first gate, a first silicon cap layercovering the P-type source/drain region and the first lightly dopedregion and a silicide layer disposed on the first silicon cap layer, andcovering only a portion of the first silicon cap layer.

The feature of the present invention is that, after forming theepitaxial layer, a silicon cap layer is formed at two sides of the gateof NMOS and PMOS respectively. In other words, the silicon cap layer isformed on the surface of the source/drain region of the NMOS and PMOS.The silicon cap layer can level up the baseline of the source/drainregion of the NMOS after the mask is removed. In this way, the shortchannel effect and the drain induced barrier lowering effect can beprevented because the depth of the p/n junction is maintained at apredetermined depth. Furthermore, the epitaxial layer will become aspacer of the NMOS after the epitaxial layer is formed.

These and other objectives of the present invention will no doubt becomeobvious to those of ordinary skill in the art after reading thefollowing detailed description of the preferred embodiment that isillustrated in the various figures and drawings.

These and other objectives of the present invention will no doubt becomeobvious to those of ordinary skill in the art after reading thefollowing detailed description of the preferred embodiment that isillustrated in the various figures and drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 through FIG. 9 are schematic cross-section view diagrams showingthe means of fabricating transistors according to the present invention.

FIG. 10 shows a schematic cross-section view diagram of a transistorstructure for improving short channel effect and drain induced barrierlowering according to the present invention.

DETAILED DESCRIPTION

FIG. 1 through FIG. 9 are schematic cross-section view diagrams showingthe means of fabricating transistors according to the present invention.

As shown in FIG. 1, first, a substrate 10 comprising a first type well12 and a second type well 14 are provided. The substrate 10 alsoincludes a top surface 11. The first type well 12 may be an N type or Ptype, and the second type well 14 may be a P type or N type. Thefollowing illustration will take the first type well 12 as an N typewell, and the second type well 14 as a P type well. In other words, aPMOS will be formed on the first type well 12 and a NMOS will be formedon the second type well 14. In addition, a shallow trench isolation(STI) 15 is disposed between the first type well 12 and the second typewell 14, and around the first type well 12 and the second type well 14within the substrate 10.

Next, a first gate 16 and a second gate 18 are formed on the first typewell 12 and the second type well 14, respectively. The first gate 16includes a first dielectric layer 20 positioned on the substrate 10 anda first conductive layer 22 positioned on the first dielectric layer 20.The second gate 18 includes a second dielectric layer 28 positioned onthe substrate 10, a second conductive layer 30 positioned on the seconddielectric layer 28. After the first gate 16 and the second gate 18 areformed, a first cap layer 24 and the second cap layer 32 are formed onthe first conductive layer 22, and on the second conductive layer 30.Then, a first spacer 26 is formed on the sidewalls of the firstdielectric layer 20, the first conductive layer 22 and the first caplayer 24, and a second spacer 34 is formed on the sidewalls of thesecond dielectric layer 28, the second conductive layer 30 and thesecond cap layer 32. Generally, the first dielectric layer 20 and thesecond dielectric layer 28 are composed of silicon dioxide, or amaterial with a high dielectric constant that is greater than 4. Thefirst conductive layer 22 and the second conductive layer 30 arecomposed of doped polysilicon, or a metal with specific work function.The first cap layer 24 and the second cap layer 32 are composed ofsilicon nitride. The first cap layer 24 and the second cap layer 32 canbe formed optionally. The first spacer 26 and the second spacer 34 aremasks for forming lightly doped regions of the drain/source regionslater. After the lightly doped regions are formed, the spacers may bekept in the structure or removed. Next, the first gate 16 and firstspacer 26 are taken as a mask to form a first lightly doped region 36 inthe substrate 10 at two sides of the first gate 16. After the formationof the first lightly doped region 36, a first distance D₁ which is theshortest distance between first lightly doped region 36 and the firstgate 16 is defined. According to a preferred embodiment of the presentinvention, the first distance D₁ is zero. Therefore, the first distanceD₁ is shown as a dot in FIG. 1.

After that, as shown in FIG. 2, a mask layer 40 is formed to cover thefirst type well 12, the second type well 14, the first gate 16, thefirst spacer 26, the second gate 18 and the second spacer 34conformally. Then, a third spacer 38 is formed around the first spacer26 by removing the mask layer 40 partly, and the remaining mask layer 40covers the second type well 14, the second gate 18, the second spacer 34and the second cap layer 32. The detailed method of forming the thirdspacer 38 and the mask layer 40 may includes the following steps. First,a silicon nitride layer is formed to cover the first type well 12, thesecond type well 14, the first gate 16, and the second gate 18. Then, apatterned photoresist (not shown) is formed to cover the second typewell 14 and the second gate 18. After that, the silicon nitride layernot covered by the patterned photoresist is removed by an etchingprocess to form the third spacer 38. Finally, as shown in FIG. 3, thepatterned photoresist is removed. The silicon nitride layer originallycovered by the patterned photoresist becomes the mask layer 40.

Please still refer to FIG. 3. Next, an epitaxial layer 42 is formed inthe substrate 10 at two sides of the first gate 16. According to apreferred embodiment of the present invention, the epitaxial layer 42includes only a SiGe epitaxial layer 44. According to another preferredembodiment of the present invention, the epitaxial layer 42 includesboth a SiGe epitaxial layer 44 and a silicon cap layer 46 formed on theSiGe epitaxial layer 44, as shown in FIG. 3. The silicon cap layer 46may be single crystalline silicon. In the following description, theepitaxial layer 42 will be shown as including both the SiGe epitaxiallayer 44 and the silicon cap layer 46. Preferably, the SiGe epitaxiallayer 44 can be formed by an embedded Silicon Germanium (e-SiGe)process. For example, the mask layer 40, the first gate 16, the firstspacer 26, the first cap layer 24 and the third spacer 38 are taken as amask to form two recesses at two sides of the third spacer 38 by anetching process. After that, silicon-containing gas andgermanium-containing gas flow into the chamber and the SiGe epitaxiallayer 44 grows in the two recesses. According to another preferredembodiment, the germanium-containing gas is turned off when the SiGeepitaxial layer 44 reaches a predetermined height. Then, the silicon caplayer 46 consisting of the single crystalline silicon can be formed onthe SiGe epitaxial layer 44. The thickness of the silicon cap layer 46can be adjusted according to product design, and the silicon cap layer46 can even be omitted according to different requirements.Additionally, the concentration of germanium in the SiGe epitaxial layer44 can be controlled to form a gradient in the SiGe epitaxial layer 44.

As shown in FIG. 4, after the embedded Silicon Germanium (e-SiGe)process is finished, a patterned photoresist (not shown) is formed tocover the first type well 12, the first gate 16 and the third spacer 38.Then, the mask layer 40 is etched partly to form a fourth spacer 48around the second spacer 34. Next, the patterned photoresist is removed.According to another preferred embodiment of forming the fourth spacer48, the method includes the following steps. First, the third spacer 38and the mask layer 40 are removed completely. Next, as shown in FIG. 5,a material layer 50 is covered on the second type well 14, the firsttype well 12, the first gate 16, the first spacer 26, the second gate 18and the second spacer 34 conformally. As shown in FIG. 6, a part of thematerial layer 50 is removed to form a seventh spacer 52 and the fourthspacer 48. The process of forming spacers only demonstrates thepreferred embodiment of the present invention. Other modifications andalterations may be made by those skilled in the technology withoutdeparting from the spirit of the invention.

The following processes continue on from the process in FIG. 4, i.e. inthe following, the processes shown in FIG. 5 and FIG. 6 have not beenperformed.

As shown in FIG. 7, a silicon cap layer 54 and a silicon cap layer 53are formed on the surface of the silicon cap layer 46 and the surface ofthe substrate 10 at two sides of the second gate 18, respectively. Morespecifically, the silicon cap layer 54 is formed on the predeterminedsource/drain region in the first type well 12. The silicon cap layer 53is formed on the predetermined source/drain region in the second typewell 14. The silicon cap layer 54 can be single crystalline silicon. Atthis point, a second distance D₂ which is the shortest distance betweenthe silicon cap layer 54 and the first gate 16 is defined. The siliconcap layers 53/54 can be formed by using the same method as that used bythe epitaxial layer 42. The silicon cap layers 53/54 can even be formedby putting the substrate 10 into the same chamber as used by theepitaxial layer 42, and turning on the silicon-containing gas again toform the silicon cap layers 53/54. According to a preferred embodimentof the present invention, the thickness of the silicon cap layer 53 andthe thickness of the silicon cap layer 54 can both be range from 50 to150 angstroms. In addition, since the silicon cap layer 54 is formed onthe silicon cap layer 46, the total thickness of the silicon cap layer46 plus the silicon cap layer 54 is greater than the silicon cap layer53. In other words, the thickness of the double silicon cap layers(silicon cap layer 46 plus silicon cap layer 54) on the SiGe epitaxiallayer 44 is greater than the thickness of the single silicon cap layer53 on the second type well 14. As shown in FIG. 7, it is note worthythat the first distance D₁ is shorter than the second distance D₂.

As shown in FIG. 8, a patterned photoresist (not shown) covers the firsttype well 12. The patterned photoresist, the second spacer 34, thefourth spacer 48 and the second gate 18 are taken as masks to perform animplantation process. After the implantation process, a second lightlydoped region 56 is formed in the substrate 10 at two sides of the secondgate 18. More specifically, because the second spacer 34 is taken as themask to form the second lightly doped region 56, the second lightlydoped region 56 will form in the substrate 10 which does not overlapwith the second spacer 34. Now, a third distance D₃ which is theshortest distance between the second lightly doped region 56 and thesecond gate 18 is defined. Please still refer FIG. 8, the first distanceD₁ is shorter than the third distance D₃. Then, a fifth spacer 58 and asixth spacer 60 are formed on the sidewalls of the third spacer 38 andthe fourth spacer 48, respectively. After that, the first cap layer 24and the second cap layer 32 are removed to expose the first conductivelayer 22 and the second conductive layer 30. Subsequently, a P-typedfirst source/drain region 62 is formed in the substrate 10 at two sidesof the first gate 16, and an N-typed second source/drain region 64 isformed in the substrate 10 at two sides of the second gate 18. At thispoint, the PMOS 66 and NMOS 68 of the present invention are completed.The fabricating sequence of the first source/drain region 62 and thesecond type source/drain region 64 can be exchanged. Additionally, thefirst source/drain region 62 may only partly overlap with the epitaxiallayer 42.

As show in FIG. 9, a salicide process is performed to transform at leastpart of the exposed first conductive layer 22, part of the exposedsecond conductive layer 30, and part of the silicon cap layers 53/54 tobecome silicide layers 55. One may notice that the top surface 57 of thesilicide layer 55 is more elevated than the top surface 11 of thesubstrate 10. After that, other fabricating processes such as forming acontact etch stop layer (CESL), a dual stress liner (DSL), or otherstress memorization technology (SMT) can also be applied to the presentinvention to increase the performance of the MOS. Then, an inter circuitprocess can be performed on the PMOS and NMOS: for example, forming aninter layer dielectric covering the PMOS 66 and NMOS 68. Next, contactplugs can be formed in the inter layer dielectric to contact the firstgate 16, the second gate 18, the first source/drain doped region 62 andthe second source/drain doped region 64. In addition, the presentinvention can also be applied to the embedded silicon carbon (e-SiC) toimprove the performance of the NMOS. For example, when performing theprocess shown in FIG. 2, the SiGe epitaxial layer is replaced with a SiCepitaxial layer.

In the process mentioned above, at least part of the mask layer 40 willbe removed after the epitaxial layer 42 is formed. After removing partof the mask layer 40, the top surface 11 of the substrate 10 at twosides of the second gate 18 is also etched. Therefore, by taking theinterface of the second dielectric layer 28 and the top surface 11 ofthe substrate 10 as reference, the baseline of the top surface 11 of thesubstrate 10 at two sides of the second gate 18 is leveled down. Thefeature of the present invention is that the silicon cap layer 54 isformed on the two sides of the first gate 16 and the silicon cap layer53 is formed at two sides of the second gate 18. In other words, thesilicon cap layers 53/54 are formed on the source/drain doped regions ofthe PMOS 66 and NMOS 68, respectively. For the NMOS 68, the silicon caplayer 53 can refill the region of the substrate 10 that is etched alongwith the mask layer 40. In other words, the baseline of the substrate 10at two sides of the second gate 18 is leveled up. The short channeleffect and drain induced barrier lowering effect can be preventedbecause the p/n junction is maintained at a predetermined depth. For thePMOS 66, the silicon cap layer 54 is primarily for the formation of thesilicide layer 55. In addition, after the epitaxial layer 42 is formed,the mask layer 40 can be used as a spacer of the NMOS 68.

FIG. 10 shows a schematic cross-section view diagram of a transistorstructure for improving short channel effect and drain induced barrierlowering according to the present invention.

As shown in FIG. 10, the NMOS 168 of the present invention includes: asubstrate 100 comprising a P-type well 114, a gate 118 disposed on theP-type well 114, a spacer 150 disposed on the gate 118, a lightly dopedregion 156 disposed in the substrate 100 below the spacer 150, an N-typesource/drain region 164 disposed in the substrate 100 at two sides ofthe gate 118, a silicon cap layer 154 covering the N-type source/drainregion 164 and a silicide layer 155 disposed on the silicon cap layer154. The gate 118 includes a dielectric layer 128 positioned on thesubstrate 100 and a conductive layer 130 positioned on the dielectriclayer 128. In addition, the spacer 150 is a composite and the spacer 150includes spacers 134/148/160 positioned on the sidewall of the gate 118.Furthermore, the thickness of the silicon cap layer 154 is 50 to 150angstroms, and the silicon cap layer 154 consists of single crystallinesilicon. Moreover, the surface of the silicide layer 155 is moreelevated than the interface between the dielectric layer 128 and thesubstrate 100.

As a result, the feature of the present invention is that a silicon caplayer 154 is at the source/drain region 164 of the NMOS 168. Therefore,the short channel effect and drain induced barrier lowering effect canbe improved.

Those skilled in the art will readily observe that numerousmodifications and alterations of the device and method may be made whileretaining the teachings of the invention. Accordingly, the abovedisclosure should be construed as limited only by the metes and boundsof the appended claims.

What is claimed is:
 1. A semiconductor structure, comprising: asubstrate comprising a N-type well, wherein the substrate comprises atop surface; a first gate comprising a first dielectric layer disposedon the N-type well, wherein the first dielectric layer contacts the topsurface; a first spacer disposed on the first gate; a first lightlydoped region in the substrate below the spacer; a P-type source/drainregion disposed in the substrate at two sides of the first gate; a firstsilicon cap layer covering the P-type source/drain region and the firstlightly doped region, wherein the first silicon cap layer is singlecrystalline silicon and the first silicon cap layer is more elevatedthan the top surface; and a silicide layer disposed on the first siliconcap layer, and covering only a portion of the first silicon cap layer.2. The semiconductor structure of claim 1, further comprising a firstdistance which is the shortest distance between first lightly dopedregion and the first gate, and a second distance which is the shortestdistance between the first silicon cap layer and the first gate, andwherein the first distance is shorter than the second distance.
 3. Thesemiconductor structure of claim 1, further comprising an NMOS disposedon the substrate, wherein the NMOS comprises: a second gate disposed onthe substrate; a second lightly doped region disposed at two side of thesecond gate, wherein a third distance which is the shortest distancedisposed between the second lightly doped region and the second gate,and wherein the first distance is shorter than the third distance; andan N-type source/drain region disposed in the substrate at two sides ofthe second gate.
 4. The semiconductor structure of claim 3, wherein theN-type source/drain region is not covered by any silicon cap layer. 5.The semiconductor structure of claim 3, wherein the NMOS furthercomprises a second silicon cap layer covering the N-type source/drainregion and the second lightly doped region.
 6. The semiconductorstructure of claim 5, wherein the first silicon cap layer is thickerthan the second cap layer.
 7. The semiconductor structure of claim 1,further comprising a second spacer disposed around the first spacer. 8.The semiconductor structure of claim 1, wherein the thickness of thefirst silicon cap layer is between 50 and 150 angstroms.
 9. Thesemiconductor structure of claim 1, wherein the first gate comprises afirst conductive layer disposed on the first dielectric layer.
 10. Thesemiconductor structure of claim 1, wherein the top surface of thesilicide layer is more elevated than the top surface of the substrate.